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Manufacturer Part #
TSHG6200
850 nm 100 mA ±10° Through Hole High Speed Infrared Emitting Diode - T-1 3/4 CT
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Bag Package Style:T-1 3/4 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay TSHG6200 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Vishay TSHG6200 - Technical Attributes
Attributes Table
| Wavelength: | 850nm |
| Angle of Half Intensity: | ±10° |
| Intensity: | 180mW/sr |
| Forward (Drive) Current: | 100mA |
| Forward Voltage: | 1.5V |
| Package Style: | T-1 3/4 |
| Mounting Method: | Through Hole |
Features & Applications
The TSHG6200 is a High speed infrared emitting diode. It consist of 850 nm wavelength in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
Features:
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Peak wavelength: λp = 850 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ? = ± 10°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 18 MHz
- Good spectral matching with CMOS cameras
- Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications:
- Infrared radiation source for operation with CMOS cameras
- High speed IR data transmission
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
4,000+
$0.465
Product Variant Information section
Available Packaging
Package Qty:
4000 per Bag
Package Style:
T-1 3/4
Mounting Method:
Through Hole