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STMicroelectronics | STB35N60DM2

Manufacturer Part #

STB35N60DM2

N-Channel 600 V 110 mOhm Surface Mount DM2 Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB35N60DM2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 210W
Qg Gate Charge: 54nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 28A
Turn-on Delay Time: 21.2ns
Turn-off Delay Time: 68ns
Rise Time: 17ns
Fall Time: 10.7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 2400pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,780.00
USD
Quantity
Unit Price
1,000
$2.78
2,000+
$2.75
Product Variant Information section