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Vishay | SIHP33N60E-GE3

Manufacturer Part #

SIHP33N60E-GE3

MOSFET 600V 99MOHM@10V 33A N-CH E-SRS

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHP33N60E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 99mΩ
Rated Power Dissipation: 278|W
Qg Gate Charge: 100nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
18,000
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,190.00
USD
Quantity
Unit Price
1,000
$3.19
2,000+
$3.15
Product Variant Information section