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Référence fabricant

IR2102SPBF

IR2102 Series 600 V 270 mA 1 W High / Low Side Driver - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IR2102SPBF - Caractéristiques techniques
Attributes Table
Configuration: High and Low Side
No of Outputs: Dual
Peak Output Current: 360mA
Supply Voltage-Max: 20V
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IR2102SPBF is a high voltage, high speed power MOSFET and IGBT driver, available in surface mount SOIC-8 package.

This device comes with independent high and low side referenced output channels and it also feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Matched propagation delay for both channels
  • Outputs out of phase with inputs (IR2102)
  • Also available LEAD-FREE
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
3800
Multiples de :
95
Total 
4 066,00 $
USD
Quantité
Prix unitaire
1
$1.15
40
$1.13
150
$1.11
400
$1.10
1 500+
$1.07
Product Variant Information section