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Référence fabricant
SUP70090E-GE3
N-Channel 100 V 8.9 mOhm 125 W ThunderFET Power Mosfet - TO-220AB
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :500 par Box Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
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Vishay SUP70090E-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SUP70090E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/sup70090e-ge3-vishay-5090503
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SUP70090E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/sup70090e-ge3-vishay-5090503
Vishay SUP70090E-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 8.9mΩ |
| Rated Power Dissipation: | 125W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 50A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 36ns |
| Rise Time: | 27ns |
| Fall Time: | 45ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 1950pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
500 par Box
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole