Référence fabricant
BSD316SNH6327XTSA1
BSD316 Series 30V 1.4A 500mW 160mOhm Single N-Channel MOSFET SOT363-6
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-363 (SC-70-6, SC-88) Méthode de montage :Surface Mount | ||||||||||
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Infineon BSD316SNH6327XTSA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject: Introduction of additional plating production at Wuxi Welnew Microelectronic Co., Ltd., Wuxi, China for several productsReason/Motivation:Expansion of plating production to assure continuity of supply and enable flexible manufacturing by recovery of Welnew Wuxi Plating site for DS products (PCN 2023-034-A) DescriptionOldShanghai Welnew Microelectronic Co., Ltd., Shanghai, ChinaNewShanghai Welnew Microelectronic Co., Ltd., Shanghai, ChinaWuxi Welnew Microelectronic Co., Ltd., Wuxi, ChinaIntended start of delivery: 2026-06-20Last order date (LOD): 2026-06-20Last delivery date (LDD): 2026-12-20
Statut du produit:
Infineon BSD316SNH6327XTSA1 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 160mΩ |
| Qg Gate Charge: | 0.6nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 1.4A |
| Turn-on Delay Time: | 3.4ns |
| Turn-off Delay Time: | 5.8ns |
| Rise Time: | 2.3ns |
| Fall Time: | 10ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | OptiMOS |
| Input Capacitance: | 71pF |
| Style d'emballage : | SOT-363 (SC-70-6, SC-88) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-363 (SC-70-6, SC-88)
Méthode de montage :
Surface Mount