Référence fabricant
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 40A TSDSON-8
|
|
|||||||||||
|
|
|||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :5000 par Reel Méthode de montage :Surface Mount |
||||||||||
| Code de date: | |||||||||||
Infineon BSZ086P03NS3EGATMA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description:NO change on electrical, thermal parameters and reliability as proven via product qualification and characterization. NO change in existing datasheet parameters NO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specification
Statut du produit:
Infineon BSZ086P03NS3EGATMA1 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 8.6mΩ |
| Rated Power Dissipation: | 2.1W |
| Qg Gate Charge: | 57.5nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 13.5A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 46ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.1V |
| Input Capacitance: | 4785pF |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
5000 par Reel
Méthode de montage :
Surface Mount