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Référence fabricant

FDN339AN

Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2431
Product Specification Section
onsemi FDN339AN - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.061Ω
Rated Power Dissipation: 0.5|W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 3A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 29ns
Rise Time: 18ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: PowerTrench
Input Capacitance: 700pF
Style d'emballage :  SSOT-3
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDN339AN is a 20 V 35 mO N-Channel 2.5 V specified MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • 3 A, 20 V. RDS(ON) = 0.035 O @ VGS = 4.5 V, RDS(ON) = 0.050 O @ VGS = 2.5 V.
  • Low gate charge (7nC typical).
  • High performance trench technology for extremelylow RDS(ON) .
  • High power and current handling capability.

Applications:

  • DC/DC converter
  • Load switch

View the complete family of N-channel Mosfets

Pricing Section
Stock global :
18 000
États-Unis:
18 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
16 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
489,00 $
USD
Quantité
Prix unitaire
3 000
$0.163
6 000
$0.161
12 000
$0.159
15 000
$0.158
45 000+
$0.155
Product Variant Information section