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Manufacturer Part #
IAUT300N08S5N012ATMA2
IAUT300Nxx Series 80 V 1.2 mOhm 300 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IAUT300N08S5N012ATMA2 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Fabrication Site Change
08/04/2023 Details and Download
Subject: Introduction of an additional wafer production and wafer test location at Infineon Technologies Austria AG, Villach, Austria for product family SFET5_80V using One Virtual Fab (1VF) approachReason/Motivation: Expansion of wafer production and wafer test into harmonized frontend cluster to assure continuity of supply and enable flexible manufacturing.
Part Status:
Active
Active
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Infineon IAUT300N08S5N012ATMA2 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 1.2mΩ |
| Rated Power Dissipation: | 375W |
| Qg Gate Charge: | 178nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 300A |
| Turn-on Delay Time: | 31ns |
| Turn-off Delay Time: | 69ns |
| Rise Time: | 19ns |
| Fall Time: | 55ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | OptiMOS |
| Input Capacitance: | 12500pF |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
2,000+
$2.97
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Mounting Method:
Surface Mount