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Référence fabricant
IPD055N08NF2SATMA1
StrongIRFET 2 Série 80V 98A 5.5mΩ N‑Channel 107W puissance Mosfet TO‑252‑3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount |
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| Code de date: | 2426 | ||||||||||
Infineon IPD055N08NF2SATMA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description of Change:Capacity expansion by introduction of an additional assembly and test location at Huayi Microelectronics Co., Ltd (HYME), China for dedicated N-channel power MOSFETs in PG-TO252-3 and PGTO263- 3 package.Reason for Change:Capacity expansion for existing assembly and final test site at Great Team Backend Foundry (GTBF)
Statut du produit:
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Infineon IPD055N08NF2SATMA1 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 5.5mΩ |
| Rated Power Dissipation: | 3W |
| Qg Gate Charge: | 36nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 21ns |
| Rise Time: | 37ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 2500pF |
| Series: | StrongIRFET 2 |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount