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Référence fabricant
IPP129N10NF2SAKMA1
Single N-Channel 100 V 12.9 mOhm 19 nC StrongIRFET™ 2 Power MOSFET - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Infineon IPP129N10NF2SAKMA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPP129N10NF2SAKMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipp129n10nf2sakma1-infineon-1211712
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPP129N10NF2SAKMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipp129n10nf2sakma1-infineon-1211712
Infineon IPP129N10NF2SAKMA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 12.9mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 52A |
| Turn-on Delay Time: | 8.8ns |
| Turn-off Delay Time: | 13ns |
| Rise Time: | 14.5ns |
| Fall Time: | 3.6ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 1300pF |
| Series: | StrongIRFET™ 2 |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
Infineon's StrongIRFET™ 2 power MOSFET 100V features low RDS(on) of 12.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP129N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
Summary of Features
•Broad availability from distribution partners
•Excellent price/performance ratio
•Ideal for high- and low-switching frequency
•Industry standard footprint through-hole package
•High current rating
•Capable of wave-soldering
Benefits
•Multi-vendor compatibility
•Right-fit products
•Supports a wide variety of applications
•Standard pinout allows for drop-in replacement
•Increased current carrying capability
•Ease of manufacturing
Emballages disponibles
Qté d'emballage(s) :
1000 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole