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Référence fabricant
IRFIBC20GPBF
Single N-Channel 600 V 30 W 18 nC Silicon Through Hole Mosfet - TO-220-3
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Std. Mfr. Pkg | ||||||||||
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Vishay IRFIBC20GPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Tuesday September 30, 2025
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFIBC20GPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfibc20gpbf-vishay-C008042474
Vishay IRFIBC20GPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 4.4Ω |
| Rated Power Dissipation: | 30W |
| Qg Gate Charge: | 18nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 1.7A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 23ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 350pF |
Emballages disponibles
Qté d'emballage(s) :
1000 par Std. Mfr. Pkg