Référence fabricant
IRFP7537PBF
Single N-Channel 60 V 3.3 mOhm 210 nC HEXFET® Power Mosfet - TO-247-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :25 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole |
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Infineon IRFP7537PBF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
Infineon IRFP7537PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 3.3mΩ |
| Rated Power Dissipation: | 230W |
| Qg Gate Charge: | 210nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 172A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 82ns |
| Rise Time: | 105ns |
| Fall Time: | 84ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3.7V |
| Technology: | Si |
| Height - Max: | 20.7mm |
| Length: | 15.87mm |
| Input Capacitance: | 7020pF |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
25 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole