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Référence fabricant
IRFR9310PBF
Single P-Channel 400 V 7 Ohm Surface Mount HEXFET Power MOSFET in a D-PAK-3
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :75 par Tube Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount |
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| Code de date: | 2441 | ||||||||||
Vishay IRFR9310PBF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR9310PBF&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfr9310pbf-vishay-6400055
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR9310PBF&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfr9310pbf-vishay-6400055
Vishay IRFR9310PBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 400V |
| Drain-Source On Resistance-Max: | 7Ω |
| Rated Power Dissipation: | 50|W |
| Qg Gate Charge: | 13nC |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRFR9310PBF is a P-Channel Power MOSFET transistors.
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
- Halogen-free According to IEC 61249-2-21 Definition
- P-Channel
- Surface Mount (IRFR9310/SiHFR9310)
- Straight Lead (IRFU9310/SiHFU9310)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Compliant to RoHS Directive 2002/95/EC
Emballages disponibles
Qté d'emballage(s) :
75 par Tube
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount