Référence fabricant
NDS355AN
N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SSOT-3 Méthode de montage :Surface Mount |
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| Code de date: | 2420 | ||||||||||
onsemi NDS355AN - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
onsemi NDS355AN - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.085Ω |
| Rated Power Dissipation: | 0.46|W |
| Qg Gate Charge: | 5nC |
| Style d'emballage : | SSOT-3 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The NDS355AN is a Part of NDS Series N-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features:
- 1.7 A, 30 V
- RDS(ON) = 0.125Ω @ VGS= 4.5 V
- RDS(ON) = 0.085 Ω @ VGS= 10 V
- Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface mount package.
Applications:
- Automation
- Broadband Access
- Broadband Modem
- Broadcast & Studio
- Building & Home Control
- Camcorder
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SSOT-3
Méthode de montage :
Surface Mount