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onsemi | NTE4151PT1G

Manufacturer Part #

NTE4151PT1G

Single P-Channel 20 V 1 Ohm 2.1 nC 313 mW Silicon SMT Mosfet - SC-89-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTE4151PT1G - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -20V
Drain-Source On Resistance-Max: 1Ω
Rated Power Dissipation: 313mW
Qg Gate Charge: 2.1nC
Gate-Source Voltage-Max [Vgss]: 6V
Drain Current: -760mA
Turn-on Delay Time: 8ns
Turn-off Delay Time: 29ns
Rise Time: 8.2ns
Fall Time: 20.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1.2V
Technology: Si
Height - Max: 0.8mm
Length: 1.7mm
Input Capacitance: 156pF
Package Style:  SC-89
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
9000
Multiple Of:
3000
Total
$204.30
USD
Quantity
Unit Price
3,000
$0.0227
12,000
$0.0221
45,000
$0.0215
90,000
$0.0212
225,000+
$0.0205
Product Variant Information section