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Référence fabricant
SI1024X-T1-GE3
Dual N-Channel 20 V 0.7 Ohm Surface Mount Power Mosfet - SOT-563
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-563 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2518 | ||||||||||
Vishay SI1024X-T1-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Vishay Siliconix announces the end of life of the commercial Low-Voltage Power MOSFET products due to the termination of 6-inch foundry site in Israel of Tower Semiconductor.Due to the limited materials left after the fab termination, some impacted parts will be limited for the LTB volume. Reason for Change:Termination of 6-inch foundry in Israel of Tower SemiconductorLast Time Buy Date: Sunday August 31, 2025Last Time Ship Date: Wednesday December 31, 2025
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI1024X-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/si1024x-t1-ge3-vishay-9001982
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI1024X-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/si1024x-t1-ge3-vishay-9001982
Vishay SI1024X-T1-GE3 - Caractéristiques techniques
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.7Ω |
| Rated Power Dissipation: | 250|mW |
| Qg Gate Charge: | 0.75nC |
| Style d'emballage : | SOT-563 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The SI1024X-T1-GE3 is a Dual N-Channel 20 V (D-S) MOSFET.
It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a SC-89 package.
Features:
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET: 1.8 V Rated
- Very Small Footprint
- High-Side Switching
- Low On-Resistance: 0.7 Ω
- Low Threshold: 0.8 V (typ.)
- Fast Switching Speed: 10 ns
- 1.8 V Operation
- Gate-Source ESD Protected: 2000 V
- Compliant to RoHS Directive 2002/95/EC
Benefits:
- Ease in Driving Switches
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
Applications:
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors,etc.
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Cell Phones, Pagers
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-563
Méthode de montage :
Surface Mount