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Manufacturer Part #
SIHP33N60EF-GE3
Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SIHP33N60EF-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/02/2025 Details and Download
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Active
Active
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Vishay SIHP33N60EF-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.098Ω |
| Rated Power Dissipation: | 278W |
| Qg Gate Charge: | 155nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 33A |
| Turn-on Delay Time: | 28ns |
| Turn-off Delay Time: | 161ns |
| Rise Time: | 43ns |
| Fall Time: | 48ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 9.14mm |
| Length: | 10.52mm |
| Input Capacitance: | 3454pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
1
$3.96
20
$3.87
75
$3.81
250
$3.76
1,000+
$3.65
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole