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STMicroelectronics | STF5NK100Z

Référence fabricant

STF5NK100Z

N-Channel 1000 V 3.7 Ohm SuperMESH3 Power MosFet TO-220FP

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STF5NK100Z - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1000V
Drain-Source On Resistance-Max: 3.7Ω
Rated Power Dissipation: 30|W
Qg Gate Charge: 59nC
Style d'emballage :  TO-220FP (TO-220FPAB)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The STF5NK100Z new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout.

In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching application
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
2 000
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
20 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
2 640,00 $
USD
Quantité
Prix unitaire
1 000
$2.64
2 000
$2.62
3 000+
$2.60
Product Variant Information section