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Référence fabricant
STW14NK50Z
N-Channel 500 V 14 A 380 mOhm Flange Mount MDmesh™ K5 Power Mosfet -TO-247
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Box Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
STMicroelectronics STW14NK50Z - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STW14NK50Z&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/stw14nk50z-stmicroelectronics-8431249
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STW14NK50Z&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/stw14nk50z-stmicroelectronics-8431249
STMicroelectronics STW14NK50Z - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 380mΩ |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 69nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 14A |
| Turn-on Delay Time: | 24ns |
| Turn-off Delay Time: | 54ns |
| Rise Time: | 16ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.75V |
| Input Capacitance: | 2000pF |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The STW14NK50Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatibility
Applications:
- Switching application
Emballages disponibles
Qté d'emballage(s) :
30 par Box
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole