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Référence fabricant

H11F1M

6-PIN DIP BILATERAL ANALOG FET OPTOCOUPLER

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2429
Product Specification Section
onsemi H11F1M - Caractéristiques techniques
Attributes Table
No of Channels: 1
Output Voltage-Max: 30V
Operating Temp-Max: 100°C
Style d'emballage :  DIP-6
Méthode de montage : Through Hole
Fonctionnalités et applications

The H11F1M consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector.

The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Features:

  • As remote variable resistor
  • ≤ 100Ω to ≥ 300MΩ
  • ≥ 99.9% linearity
  • ≤ 15pF shunt capacitant
  • ≥ 100GΩ I/O isolation resistance
  • As an analog switch
  • Extremely low offset voltage
  • 60Vpk-pk signal capability
  • No charge injection or latch-up
  • ton, toff ≤ 15µS
  • UL recognized (File #E90700)

Applications:

  • As a remote variable  resistor:
    • Isolated variable attenuator
    • Automatic gain control
    • Active filter fine tuning/band switching
  • As an analog switch:
    • Isolated sample and hold circuit
    • Multiplexed, optically isolated A/D conversion
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
1 985
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
2000
Multiples de :
50
Total 
980,00 $
USD
Quantité
Prix unitaire
40
$0.545
125
$0.535
300
$0.525
750
$0.515
2 000+
$0.49
Product Variant Information section