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Manufacturer Part #

H11G2M

DIP6 Through Hole Single Channel 80 V 4170 VAC Photo Darlington Optocoupler

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2447
Product Specification Section
onsemi H11G2M - Technical Attributes
Attributes Table
No of Channels: 1
Isolation Voltage-RMS: 4170V
Output Voltage-Max: 80V
CTR-Min: 1000%
Operating Temp-Max: 100°C
Package Style:  DIP-6
Mounting Method: Through Hole
Features & Applications

The H11G2M is a photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Features:

  • High BV CEO– Minimum 100V for H11G1M– Minimum 80V for H11G2M– Minimum 55V for H11G3M
  • High sensitivity to low input current (Min. 500% CTR at IF = 1mA)
  • Low leakage current at elevated temperature (Max. 100µA at 80°C)
  • Underwriters Laboratory (UL) recognized File # E90700, Volume 2

Applications:

  • CMOS logic interface
  • Telephone ring detector
  • Low input TTL interface
  • Power supply isolation
  • Replace pulse transformer
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$0.25
USD
Quantity
Unit Price
1
$0.245
150
$0.24
500
$0.235
2,000
$0.23
7,500+
$0.22