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Infineon CoolMOS™ P7 MOSFETs

Excellent performance, ease-of-use and cost-effectiveness

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET series is designed to address typical challenges in various applications by delivering best-in-class price/performance ratio with excellent ease-of-use.


700V CoolMOS™ P7 N-Channel Superjunction MOSFETs

To meet the latest trends in flyback topologies, the Infineon 700V CoolMOS™ P7 n-channel superjunction (SJ) MOSFET series is a revolutionary technology for super high voltage power MOFETs that addresses the low power SMPS market. It focuses on mobile phone chargers and notebook adapters, but it is also suitable for power supplies used within lighting applications, home entertainment (TV, game consoles or audio), as well as auxiliary power supplies.

The 700V CoolMOS™ P7 SJ MOSFET family achieves outstanding efficiency gains and a decrease in device temperature. This n-channel superjunction MOSFET family's cost-competitive technology results in low switching losses, great thermal behavior and high-speed switching.

  • Extremely low losses due to very low FROM RDS(on) *Qg and RDS(on) *Eoss
  • Excellent thermal behavior
  • Integrated ESD protection diode
  • Low Switching Losses (Eoss)
  • Product validation acc. JEDEC Standard
  • Cost competitive technology
  • Lower Temperature
  • High ESD ruggedness
  • Enables efficiency gains at higher switching frequencies
  • Enables high power density designs and small form factors


800V CoolMOS™ P7 N-Channel Superjunction MOSFETs

With the 800V CoolMOS™ P7 series, Infineon sets a benchmark in 800V superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This new product family is a perfect fit for flyback based consumer SMPS applications in addition to PFC stages within consumer, as well as solar applications, adapter, audio, lighting, AUX SMPS, industrial SMPS. This series fully covers the market needs in terms of its price/performance ratio.

Achieving up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature, the 800V transistor series also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Find out how this staple enabled higher power density designs, BOM savings, as well as lower assembly cost.

  • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss
  • Best-in-class DPAK RDS(on)
  • Best-in-class V(GS)th of 3V and smallest V(GS) the variation of ±0.5V
  • Integrated Zener Diode ESD protection
  • Fully qualified acc. JEDEC for Industrial Applications
  • Fully Optimized Portfolio
  • Best-in-class performance
  • Enabling Higher Power Density Designs, BOM savings and lower assembly costs
  • Easy to drive and to parallel
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs