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Référence fabricant
FDS3890
N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
onsemi FDS3890 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FDS3890&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/fds3890-onsemi-7454218
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FDS3890&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/fds3890-onsemi-7454218
onsemi FDS3890 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 44mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 25nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.7A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 8ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.3V |
| Technology: | PowerTrench |
| Input Capacitance: | 1180pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FDS3890 is a 80 V 44 mΩ Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features:
- 4.7 A, 80 V
- RDS(on) = 44 mΩ@ VGS = 10 V
- RDS(on) = 50 mΩ @ VGS = 6 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications:
- Consumer Appliances
- Home Audio System Components
- Medical Electronics/Devices
- Military & Civil Aerospace
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount