text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Optoelectronics
  4. Photodetectors (Infrared Detectors)
  5. QSE122

onsemi | QSE122

Manufacturer Part #

QSE122

QSE122 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2530
Product Specification Section
onsemi QSE122 - Technical Attributes
Attributes Table
Wavelength: 880nm
Angle of Half Sensitivity: ±25°
Power Dissipation: 100mW
CE Voltage-Max: 30V
Collector Current @ 25C: 3mA
Mounting Method: Through Hole
Features & Applications

The QSE122 is a 30 V 880 nm, Through Hole Plastic Silicon Infrared Phototransistor. Its Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: Sidelooker
  • Medium wide reception angle, 50°
  • Package material and color: black epoxy
  • Matched emitter: QEE113
  • Daylight filter
  • High sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSE1 Series of Phototransistors

Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
31 Weeks
Minimum Order:
500
Multiple Of:
500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$132.50
USD
Quantity
Unit Price
500
$0.265
1,500
$0.26
7,500
$0.255
12,500+
$0.25
Product Variant Information section