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Infineon | IPB015N08N5ATMA1

Manufacturer Part #

IPB015N08N5ATMA1

IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2438
Product Specification Section
Infineon IPB015N08N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 178nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 33ns
Turn-off Delay Time: 83ns
Rise Time: 32ns
Fall Time: 28ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 13000pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,330.00
USD
Quantity
Unit Price
1,000
$3.33
2,000+
$3.29
Product Variant Information section