Name: Infineon IRFH5302TRPBF
Brand: Infineon
SKU: 4499372
Price: 0.365 USD
Availability: InStock

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refer to technical specifications

Manufacturer Part #

IRFH5302TRPBF

Single N-Channel 30 V 3.5 mOhm 76 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

IRFH5302TRPBF Datasheet
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Mfr. Name:	Infineon
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 4000 per Reel Package Style: PQFN 5 x 6 mm Mounting Method: Surface Mount
Date Code:	2314

Infineon IRFH5302TRPBF - Technical Attributes

Fet Type:	N-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	3.5mΩ
Rated Power Dissipation:	3.6W
Qg Gate Charge:	76nC
Gate-Source Voltage-Max [Vgss]:	20V
Drain Current:	32A
Turn-on Delay Time:	18ns
Turn-off Delay Time:	22ns
Rise Time:	51ns
Fall Time:	18ns
Operating Temp Range:	-55°C to +150°C
Gate Source Threshold:	2.35V
Technology:	Si
Height - Max:	0.9mm
Length:	6mm
Input Capacitance:	4400pF
Package Style:	PQFN 5 x 6 mm
Mounting Method:	Surface Mount

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Features & Applications

International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5302TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).

The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5302TRPbF 30V device delivers industry leading RDS(on) of only 2.1mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.

The 30V IRFH5302TRPbF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5302TRPbF features ultra low RDS(on) of 2.1mOhm (max.) combined with just 29nC gate charge (Qg).

In addition to achieving excellent thermal performance, as a result of using the IRFH5302TRPbF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.

The IRFH5302TRPBF is a 30V,100a, 2.1mohms, PQFN package mosfet.