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Manufacturer Part #

BSC060N10NS3GATMA1

N-Channel 100 V 6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2345
Product Specification Section
Infineon BSC060N10NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 125|W
Qg Gate Charge: 51nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,625.00
USD
Quantity
Unit Price
5,000
$0.525
10,000+
$0.515