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Manufacturer Part #

IRFHS9301TRPBF

Single P-Channel 30 V 65 mOhm 6.9 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFHS9301TRPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 37mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 13ns
Rise Time: 80ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -2.4V
Input Capacitance: 580pF
Package Style:  PQFN 2 x 2 mm
Mounting Method: Surface Mount
Features & Applications

The IRFHS9301 series P-channel surface mount power mosfet with PQFN-6 package.

Features:

  • Low RDSon (≤ 37.0 mΩ)
  • Low Thermal Resistance to PCB (≤ 13°C/W)
  • Low Profile (≤ 1.0 mm)
  • Compatible with Existing Surface Mount Techniques
  • RoHS Compliant Containing no Lead, no Bromide and no Halogen
  • MSL1, Consumer Qualification

Applications:

  • Charge and Discharge Switch for Battery Application
  • System/Load switch
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$840.00
USD
Quantity
Unit Price
4,000
$0.21
8,000
$0.205
20,000+
$0.20
Product Variant Information section