IXTT110N10L2 in Tube by Littelfuse – IXYS | Mosfets | Future Electronics
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Manufacturer Part #

IXTT110N10L2

N-Channel 100 V 18 mOhm 600 W SMT Power Mosfet - TO-268

ECAD Model:
Mfr. Name: Littelfuse – IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Littelfuse – IXYS IXTT110N10L2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 600W
Qg Gate Charge: 260nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 110A
Turn-on Delay Time: 28ns
Turn-off Delay Time: 99ns
Rise Time: 130ns
Fall Time: 24ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Input Capacitance: 10.5nF
Package Style:  TO-268 (D3PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
300
Multiple Of:
30
Total
$3,903.00
USD
Quantity
Unit Price
1
$13.66
5
$13.48
25
$13.31
50
$13.23
150+
$13.01
Product Variant Information section