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Manufacturer Part #

SCTW40N120G2VAG

1200 V 75 mOhm 33 A Automotive‑Grade Silicon Carbide Power MOSFET- HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCTW40N120G2VAG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 33A
Input Capacitance: 1230pF
Power Dissipation: 290W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$6,006.00
USD
Quantity
Unit Price
30
$10.20
90
$10.12
150
$10.08
450
$10.01
750+
$9.94
Product Variant Information section