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Manufacturer Part #
IRFI540NPBF
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) | ||||||||||
| Date Code: | 2422 | ||||||||||
Infineon IRFI540NPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFI540NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/8744484
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFI540NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/8744484
Infineon IRFI540NPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.052Ω |
| Rated Power Dissipation: | 54W |
| Qg Gate Charge: | 94nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 8.2ns |
| Turn-off Delay Time: | 44ns |
| Rise Time: | 39ns |
| Fall Time: | 33ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 9.8mm |
| Length: | 10.63mm |
| Input Capacitance: | 1400pF |
| Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolations is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Features
Advanced Process Technology
Isolated Package
High Voltage Isolation – 2.5KVRMS5
Sink to Lead Creepage Dist. – 4. 8mm
Fully Avalanche Rated
Lead-Free
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)