Manufacturer Part #
HUF75339P3
N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
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onsemi HUF75339P3 - Product Specification
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onsemi HUF75339P3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.012Ω |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 110nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The HUF75339P3 is a N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.
Features:
- 75 A, 55 V
- Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, ¡°Guidelines for Soldering Surface Mount Components to PC Boards¡±
Applications:
- TBA
Available Packaging
Package Qty:
800 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount