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Manufacturer Part #

HUF75339P3

N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi HUF75339P3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.012Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 110nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The HUF75339P3 is a N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

Features:

  • 75 A, 55 V
  • Simulation Models
  • Temperature Compensated PSPICE® and SABER™ Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
  • TB334, ¡°Guidelines for Soldering Surface Mount Components to PC Boards¡± 

Applications:

  • TBA
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$784.00
USD
Quantity
Unit Price
1
$1.07
40
$1.04
200
$1.01
750
$0.98
3,000+
$0.93
Product Variant Information section