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Diodes Incorporated | DMN10H120SE-13

Manufacturer Part #

DMN10H120SE-13

Single N-Channel 100 V 122 mOhm 5.2 nC 2.1 W Silicon SMT Mosfet - SOT-223

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2403
Product Specification Section
Diodes Incorporated DMN10H120SE-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 122mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 5.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.6A
Turn-on Delay Time: 3.8ns
Turn-off Delay Time: 11ns
Rise Time: 1.8ns
Fall Time: 2.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1.65mm
Length: 6.55mm
Input Capacitance: 549pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$512.50
USD
Quantity
Unit Price
2,500
$0.205
5,000
$0.20
12,500
$0.199
37,500+
$0.194
Product Variant Information section