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onsemi | FDS4675

Manufacturer Part #

FDS4675

P-Channel 40 V 13 mOhm PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS4675 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 13mΩ
Rated Power Dissipation: 2.4|W
Qg Gate Charge: 56nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4675 is a 40 V 13 mΩ P-Channel MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V – 20 V)

Features:

  • –11 A, –40 V RDS(ON) = 0.013 W @ VGS = –10 VRDS(ON) = 0.017 W @ VGS = –4.5 V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability
  • Qualified to AEC Q101
  • RoHS Compliant

Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,137.50
USD
Quantity
Unit Price
2,500
$0.455
5,000
$0.445
10,000
$0.44
12,500+
$0.435
Product Variant Information section