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Manufacturer Part #


Single N-Channel 20 V 0.5 W 5 nC DMOS Surface Mount Mosfet - SOT-23

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2102
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.21Ω
Rated Power Dissipation: 0.5W
Qg Gate Charge: 5nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.3A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 10ns
Rise Time: 25ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: DMOS
Height - Max: 0.94mm
Length: 2.92mm
Input Capacitance: 162pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The NDS331N is a Part of NDS Series N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.


  • 1.3 A, 20 V.
  • RDS(ON) = 0.21Ω @ VGS= 2.7 V
  • RDS(ON) = 0.16 Ω @ VGS= 4.5 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability.


  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Global Stock:
Germany (Online Only):
Factory Stock:Factory Stock:
Factory Lead Time:
52 Weeks
Minimum Order:
Multiple Of:
Web Price
Product Variant Information section