text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 213,000

On Order:Order inventroy details 618,000
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 3,000
Multiple Of: 3,000
Quantity Web Price
3,000 $0.115
9,000 $0.096
15,000 $0.095
30,000 $0.093
60,000+ $0.092
Total:

$345.00

USD
Attributes
Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 20V
Drain-Source On Resistance-Max 0.21Ω
Rated Power Dissipation 0.5W
Qg Gate Charge 5nC
Gate-Source Voltage-Max [Vgss] 8V
Drain Current 1.3A
Turn-on Delay Time 5ns
Turn-off Delay Time 10ns
Rise Time 25ns
Fall Time 5ns
Operating Temp Range -55°C to +150°C
Gate Source Threshold 1V
Technology DMOS
Height - Max 0.94mm
Length 2.92mm
Input Capacitance 162pF
Features and Applications

The NDS331N is a Part of NDS Series N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • 1.3 A, 20 V.
  • RDS(ON) = 0.21Ω @ VGS= 2.7 V
  • RDS(ON) = 0.16 Ω @ VGS= 4.5 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability.

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder