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Référence fabricant
TN0106N3-G
N-Channel 60 V 2 A 3 Ω 1 W Through Hole Enhancement Mode MosFet TO-92
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :1000 par Bag Style d'emballage :TO-92 Méthode de montage :Through Hole |
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Microchip TN0106N3-G - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
*** Update for PCN 111842 /Location Change***Description of Change: Qualification of Microchip Technology Colorado ? Fab 5 (MCSO) as a new fabrication site for multiple device families of DMOS2.5 (63K, 6K, 6FK, 6GK, 6HK) technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (MCSO - FAB 5), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand. *Note: The attached file called Tempe_Fab2_IATF_Decertification is for the manufacturing site deactivation of Microchip Technology Tempe ? Fab 2 (TMGR), contact your local Microchip sales office for inquiries.Estimated First Ship Date: 08 October 2025 (date code: 2541)Revision History: March 26, 2025: Issued initial notification. September 04, 2025: Issued final notification. Attached the Qualification Report. Provided estimated first ship date to be on October 08, 2025.
Description of Change: Qualification of Microchip Technology Colorado ? Fab 5 (MCSO) as a new fabrication site for multiple device families of DMOS2.5 (63K, 6K, 6FK, 6GK, 6HK) technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (MCSO - FAB 5), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand. *Note: The attached file called Tempe_Fab2_IATF_Decertification is for the manufacturing site deactivation of Microchip Technology Tempe ? Fab 2 (TMGR), contact your local Microchip sales office for inquiries.Estimated Qualification Completion Date: July 2025
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=TN0106N3-G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/discretes--transistors--mosfets/tn0106n3-g-microchip-4049319
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=TN0106N3-G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/discretes--transistors--mosfets/tn0106n3-g-microchip-4049319
Microchip TN0106N3-G - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 3Ω |
| Rated Power Dissipation: | 1|W |
| Style d'emballage : | TO-92 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
1000 par Bag
Style d'emballage :
TO-92
Méthode de montage :
Through Hole