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Manufacturer Part #
ZVN4210GTA
Single N-Channel 100 V 2 W Silicon Surface Mount Mosfet - SOT-223
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| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2420 | ||||||||||
Diodes Incorporated ZVN4210GTA - Product Specification
Shipping Information:
ECCN:
PCN Information:
*Update to Future PCN 40708*REV01: 1) Clarified part marking diagrams for SM-8 devices, and SOT26 device (P/N DRDC3105E6-7 only)2) Adding two affected part numbers: ZHCS2000TA and ZLLS2000TA (both in SOT-26 package)In order to improve product traceability, Diodes will add date code information to the part marking of part numbers. Affected products are manufactured in SM-8, SOT-26 or SOT-223 packages at Diodes’ internal Assembly & Test sites. There is no change to fit or function of the affected products.
Addition of Date Code Information to Part MarkingIn order to improve product traceability, Diodes will add date code information to the part marking of below listed part numbers.Affected products are manufactured in SM-8, SOT-26 or SOT-223 packages at Diodes’ internal Assembly & Test sites.There is no change to fit or function of the affected products.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=ZVN4210GTA&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/zvn4210gta-diodes-incorporated-3005457
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=ZVN4210GTA&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/zvn4210gta-diodes-incorporated-3005457
Diodes Incorporated ZVN4210GTA - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 1.8Ω |
| Rated Power Dissipation: | 2W |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 800mA |
| Turn-on Delay Time: | 4ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 8ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.4V |
| Technology: | Si |
| Height - Max: | 1.5mm |
| Length: | 6.55mm |
| Mounting Method: | Surface Mount |
Features & Applications
The ZVN4210GTA is a N-Channel Enchancement mode vertical DMOS FET with 0.8 A Continuous Drain Current.
Features:
- 100 Volt VDS
- Low RDS(on)= 1.5 Ω
- Operating and Storage Temperature Range Tj:Tstg: -55 to +150 °C
Available Packaging
Package Qty:
1000 per Reel
Mounting Method:
Surface Mount