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Manufacturer Part #
FDC608PZ
P-Channel 20 V 30 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Package Style:SSOT-6 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2047 | ||||||||||
onsemi FDC608PZ - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDC608PZ&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fdc608pz-onsemi-2002792
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDC608PZ&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fdc608pz-onsemi-2002792
onsemi FDC608PZ - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 30mΩ |
| Rated Power Dissipation: | 0.8|W |
| Qg Gate Charge: | 17nC |
| Package Style: | SSOT-6 |
| Mounting Method: | Surface Mount |
Features & Applications
The FDC608PZ is a 20 V, 30 mOhm P-Channel 2.5 V Specified PowerTrench Mosfet in a SSOT-6 package .
This P-Channel MOSFET has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications like load switching and power management, battery power circuits, and DC/DC conversions.
Product Features :
- -5.8 A, -20 V, RDS(on) = 30 mΩ @ VGS = -4.5 V RDS(on) = 43 mΩ @ VGS = -2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)
Applications :
Available Packaging
Package Qty:
3000 per
Package Style:
SSOT-6
Mounting Method:
Surface Mount