
Manufacturer Part #
FQD2N60CTM
N-Channel 600 V 1.9 A 4.7 Ohm Surface Mount Power Mosfet - TO-252-3
Product Specification Section
onsemi FQD2N60CTM - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
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onsemi FQD2N60CTM - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 4.7Ω |
Rated Power Dissipation: | 2.5|W |
Qg Gate Charge: | 8.5nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 1.9A |
Turn-on Delay Time: | 9ns |
Turn-off Delay Time: | 24ns |
Rise Time: | 25ns |
Fall Time: | 28ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | DMOS |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 180pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
9 Weeks
Quantity
Unit Price
2,500
$0.345
5,000
$0.34
10,000
$0.335
12,500+
$0.33
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount