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onsemi | FQD2N60CTM

Manufacturer Part #

FQD2N60CTM

N-Channel 600 V 1.9 A 4.7 Ohm Surface Mount Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2511
Product Specification Section
onsemi FQD2N60CTM - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 4.7Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 8.5nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 1.9A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 24ns
Rise Time: 25ns
Fall Time: 28ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: DMOS
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 180pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$962.50
USD
Quantity
Unit Price
2,500
$0.385
5,000
$0.38
10,000
$0.375
12,500+
$0.37
Product Variant Information section