Free shipping over $100 USD. Conditions apply
Manufacturer Part #
IRFR5305TRLPBF
Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA
| | |||||||||||
| | |||||||||||
| Nombre del Fabricante: | Infineon | ||||||||||
| Número de pieza del fabricante: | Product Variant Information section Embalajes disponiblesCant. de paquetes:3000 por Reel Estilo de empaquetado:TO-252AA Método de montaje:Surface Mount | ||||||||||
| Código de fecha: | |||||||||||
Infineon IRFR5305TRLPBF - Especificaciones de producto
Información de envío:
ECCN:
Información del CP:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Estado del producto:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=fr&field2=IRFR5305TRLPBF&field4=Infineon&field18=https://p1emea.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfr5305trlpbf-infineon-6115521
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=fr&field2=IRFR5305TRLPBF&field4=Infineon&field18=https://p1emea.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfr5305trlpbf-infineon-6115521
Infineon IRFR5305TRLPBF - Caracteristicas Técnicas
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.065Ω |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 63nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 39ns |
| Rise Time: | 66ns |
| Fall Time: | 63ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 1200pF |
| Estilo de empaquetado: | TO-252AA |
| Método de montaje: | Surface Mount |
Embalajes disponibles
Cant. de paquetes:
3000 por Reel
Estilo de empaquetado:
TO-252AA
Método de montaje:
Surface Mount