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Infineon | IRLMS2002TRPBF

Manufacturer Part #

IRLMS2002TRPBF

Single N-Channel 20 V 0.045 Ohm 22 nC HEXFET® Power Mosfet - MICRO-6

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLMS2002TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.045Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 6.5A
Turn-on Delay Time: 8.5ns
Turn-off Delay Time: 36ns
Rise Time: 11ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.2V
Technology: Si
Height - Max: 1.3mm
Length: 3mm
Input Capacitance: 1310pF
Package Style:  MICRO-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$573.00
USD
Quantity
Unit Price
3,000
$0.191
6,000
$0.189
12,000
$0.187
15,000
$0.186
45,000+
$0.182
Product Variant Information section