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Manufacturer Part #

SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 1935
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 270W
Qg Gate Charge: 105nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 45A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 45ns
Rise Time: 20ns
Fall Time: 28ns
Operating Temp Range: -55°C to +200°C
Gate Source Threshold: 3.5V
Technology: SiC
Height - Max: 20.15mm
Length: 15.75mm
Input Capacitance: 1700pF
Mounting Method: Through Hole
Pricing Section
Global Stock:
3,226
USA:
3,226
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$14.24
USD
Quantity
Web Price
1
$14.24
4
$13.25
15
$12.38
30
$11.94
75+
$11.39