text.skipToContent text.skipToNavigation

Manufacturer Part #

SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

Product Specification Section
STMicroelectronics SCT30N120 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 45A
Input Capacitance: 1700pF
Power Dissipation: 270W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
52 Weeks
Minimum Order:
600
Multiple Of:
30
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$10,716.00
USD
Quantity
Web Price
1
$18.75
5
$18.51
25
$18.27
50
$18.16
150+
$17.86