Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Référence fabricant
SI4431CDY-T1-GE3
Single P-Channel 30 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
|
|
|||||||||||
|
|
|||||||||||
| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount |
||||||||||
| Code de date: | 2529 | ||||||||||
Vishay SI4431CDY-T1-GE3 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: Due to the fire accident in Jan-2023, the original plating subcon of Vishay Siliconix, Welnew-Wuxi, is suspended and will be entirely replaced by the new site in Shanghai, China (Welnew-Shanghai). This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai. Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments. Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Expected Influence on Quality/Reliability/Performance: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet.Time Schedule:Start Shipment Date: Wed Jul 5, 2023
PCN UPDATE - FPCN 95348Potential delivery interruption for the selected Power MOSFETs due to the fire accident at Welnew Wuxi factory and the adoption of the alternative site in Vishay Tianjin.Description of Change: This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it?s expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET. The detail part list of each package is attached in the following pages of this advisory.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.During this period, we expect the delivery interruptions in January and February while these could be caught up by the end of March this year based on current assessment status. Before Welnew Shanghai being ready for production, Vishay Tianjin plant will offer the support as the alternative backup plating site to minimize the impact as more as possible.All the migration plans are kick off and on-going already, including the restart of Welnew Shanghai plant and the alternative plating process inVishay Tianjin plant.
This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it's expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.
Statut du produit:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI4431CDY-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/si4431cdy-t1-ge3-vishay-4527552
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI4431CDY-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/si4431cdy-t1-ge3-vishay-4527552
Vishay SI4431CDY-T1-GE3 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 32mΩ |
| Rated Power Dissipation: | 4.2|W |
| Qg Gate Charge: | 38nC |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount