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Manufacturer Part #

SIJ478DP-T1-GE3

N-Channel 80 V 8 mOhm 62.5 W SMT TrenchFET Power Mosfet-PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIJ478DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 5W
Qg Gate Charge: 35.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18.6A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 32ns
Rise Time: 8ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.6V
Input Capacitance: 1855pF
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
39,000
Factory Lead Time:
29 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,085.00
USD
Quantity
Unit Price
3,000
$0.695
6,000
$0.685
9,000+
$0.675
Product Variant Information section