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Référence fabricant
SISS10DN-T1-GE3
N-Channel 40 V 2.65 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8S
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :3000 par Reel Méthode de montage :Surface Mount |
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| Code de date: | 2450 | ||||||||||
Vishay SISS10DN-T1-GE3 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SISS10DN-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/siss10dn-t1-ge3-vishay-6090501
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SISS10DN-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/siss10dn-t1-ge3-vishay-6090501
Vishay SISS10DN-T1-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 2.65mΩ |
| Rated Power Dissipation: | 4.8W |
| Qg Gate Charge: | 50nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31.7A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 28ns |
| Rise Time: | 19ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.4V |
| Input Capacitance: | 3750pF |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Méthode de montage :
Surface Mount