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Manufacturer Part #

SQSA80ENW-T1_GE3

MOSFET N-CH 80V 18A POWERPAK1212

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2510
Product Specification Section
Vishay SQSA80ENW-T1_GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 62.5W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 19ns
Rise Time: 2ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 1086pF
Series: TrenchFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
42 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,425.00
USD
Quantity
Unit Price
3,000
$0.475
6,000
$0.47
9,000
$0.465
15,000+
$0.455
Product Variant Information section