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STMicroelectronics | STB30NF10T4

Manufacturer Part #

STB30NF10T4

N-Channel 100 V 0.045 Ohm Surface Mount STripFET II MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STB30NF10T4 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.045Ω
Rated Power Dissipation: 115|W
Qg Gate Charge: 40nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB30NF10T4 is a N-channel Low gate charge STripFET™ II Power MOSFET. This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. It has an Operating temperature ranges b/w -55 °C to 175 °C and available in a D²PAK Package.

Features:

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application oriented characterization

Applications:

  • Switching applications

View the list of available STB30 Series of MOSFETs

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
2000
Multiple Of:
1000
Total
$1,350.00
USD
Quantity
Unit Price
1,000
$0.685
2,000
$0.675
3,000
$0.67
5,000
$0.665
10,000+
$0.65
Product Variant Information section