Manufacturer Part #
FM25L16B Series 16 Kb (2 K x 8) 3.3 V SMT Serial F-RAM Memory - SOIC-8
|Standard Pkg:|| |
Product Variant Information section
2500 per Reel
Cypress FM25L16B-GTR - Product Specification
Description of Change: Cypress announces the qualification of Greatek Electronics Inc., Taiwan located at No. 136, Gong-Yi Rd., Zhunan Township, Miaoli County 350, Taiwan as an alternate assembly site for select 8-Lead SOIC package for FRAM products. Benefit of Change: Qualification of alternative manufacturing sites is part of the ongoing flexible manufacturing initiative announced by Cypress. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions. Anticipated Impact: Products assembled at Greatek are completely compatible with existing products from form, fit, functional, parametric, and quality performance perspectives.
Addendum to PCN201502A - Qualification of Fab 25 as an Alternate Wafer Fab Site and a Bond Wire Change for Industrial-Grade 4Kb, 16Kb and 64Kb F-RAM Products Description of Change: The purpose of this addendum is to add additional parts to the affected part list. Refer to the "Remark" in the affected parts list. Cypress announced the qualification of Fab 25 (5204 East Ben White Boulevard, Austin, TX78741, USA) as an alternate wafer fab site for industrial-grade 4Kb, 16Kb and 64Kb F-RAM products. The new industrial-grade 4Kb, 16Kb and 64Kb F-RAM products are form, fit and function compatible with the current industrial-grade 4Kb, 16Kb and 64Kb F-RAM products manufactured at Global Foundries. Additionally, for products in the DFN package, the wire material is changed from Au to CuPdAu. There will be no change to the existing marketing part numbers. Benefit of Change: Qualification of alternate manufacturing sites and technologies is part of Cypress' ongoing flexible manufacturing initiative. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions. Approximate Implementation Date: Effective 90 days from the date of this notification or upon customer approval, whichever comes first, all shipments Industrial part numbers in the attached file will be supplied from Fab25 or other approved wafer fabrication sites. Anticipated Impact: Products fabricated at the new site are completely compatible with existing products from form, fit, functional, parametric and quality performance perspectives. Cypress also recommends that customers take this opportunity to review these changes against current application notes, system design considerations and customer environment conditions to assess impact (if any) to their application.
Subject: Addendum to PCN201502 - Qualification of Fab 25 as an Alternate Wafer Fab Site and a Bond Wire Change for Industrial-Grade 4Kb, 16Kb and 64Kb F-RAM ProductsDescription of Change: The purpose of this addendum is to update the affected parts list and to attached QTP194521 package qualification report missed in the initial PCN201502. Refer to the "Remark" in the affected parts list.
Addendum to PIN195102 - Manufacturing Label and Packing Configuration Standardization Description of Change: The purpose of this addendum is to correct the date from January 20, 2019 to January 20, 2020, in the "3rd paragraph in the 'Description of Change' section. This notification is to inform customers that Cypress will be standardizing its manufacturing labels and tray/tube packing configuration. It may be recalled that the Cypress entity consolidation (following the merger with Spansion Corp) was announced via Product Information Notification PIN174801 in November 2017. As the next phase of the entity consolidation process, Cypress will be adapting a new manufacturing label format for all products and revising shipping configurations for select product shipped in trays and tubes.
Cypress FM25L16B-GTR - Technical Attributes
|FRAM Type:||Non Volatile|
|Memory Organization:||2 K x 8|
|Supply Voltage-Nom:||2.7V to 3.6V|
|Temperature Range:||-40°C to +85°C|
|Mounting Method:||Surface Mount|
$Features & Applications
It is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM.
- 16K bit Ferroelectric Nonvolatile RAM:
- Organized as 2,048 x 8 bits
- High Endurance 100 Trillion (1014) Read/Writes
- 38 Year Data Retention (@ +75ºC)
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process
- Very Fast Serial Peripheral Interface - SPI:
- Up to 20 MHz Frequency
- Direct Hardware Replacement for EEPROM
- SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
- Sophisticated Write Protection Scheme:
- Hardware Protection
- Software Protection
- Low Power Consumption:
- Low Voltage Operation 2.7-3.6 V
- 200 µA Active Current (1 MHz)
- 3 µA (typ.) Standby Current
- Computing : priter and Raid Systems
- Industrial, scientific and Medical
- Wireless Memory/RFID
2500 per Reel