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Battery Energy Storage Systems and Renewable Energy
Playing a crucial role in both residential and commercial applications
Battery energy storage systems (BESS) play a crucial role in building a low-carbon world. Government policies promoting decarbonization are accelerating the deployment of BESS, as is the need for storage and control of renewable energy sources such as solar power, and the continuing reduction in the cost of lithium-ion batteries.
BESS are widely used in both residential and commercial settings. In residential applications, a BESS serves as a back-up power supply, preventing unexpected power outages and saving cost by shifting electrical energy from low-value to high-value periods.
In commercial applications, BESS can efficiently store and manage the free and clean energy produced by a solar inverter, reducing an organisation’s carbon emissions. Another key attribute of BESS is its ability to reduce the grid pressure caused by the growing demand for EV charging.
Use the menu below to see the parts related to each section on the diagram.
BESS can be either AC-coupled or DC-coupled: the block diagram shows a DC-coupled system, with the functional blocks supported by onsemi colored orange. The AC-coupled architecture is similar but not identical, and is also supported by a wide range of onsemi products.
A DC-coupled system stores energy directly from solar panels or other DC energy sources, reducing conversion losses and increasing system efficiency. onsemi products for a DC-coupled BESS include discrete SiC and IGBT power switches, power modules, isolated gate drivers, and power management controllers.
The onsemi product range is suitable for residential, commercial and utility (grid-scale) applications.
onsemi BESS System Solution Guide A detailed design guide and a list of recommended products can be found in the BESS System Solution Guide from onsemi. |
Technical guidance on designing for BESS and renewable energy
Future Electronics’ power systems expert Riccardo Collura has described how advanced electronics technologies, including silicon carbide (SiC) material, are helping manufacturers to profit from the opportunities in decarbonization, including in renewable energy.
onsemi’s Hunter Freberg explains how the latest generation of onsemi 1200V IGBTs raises energy efficiency to a new level.
Start developing with the latest evaluation boards for renewable energy systems
Board part number: NCP-NCV51563D2PAK7LGEVB
NCP-NCV51563D2PAK7LGEVB Evaluation Board The NCP-NCV51563D2PAK7LGEVB is an evaluation board for the NCP/NCV51563 gate driver family, which is suitable for driving the SiC MOSFETs typically used to achieve high efficiency in BESS power conversion circuits. The board features an NCP51563 gate driver and two SiC MOSFETs in a standard D2PAK-7L package. The NCP51563 is an isolated dual-channel gate driver with 4.5A/9A source and sink peak current. |
The gate driver supports the fast-switching requirement of power MOSFETs and SiC MOSFET power switches. The NCP51563 offers short and matched propagation delays, and provides independently 5kVrms of internal galvanic isolation from input to each output. Internal functional isolation between the two output drivers allows for a working voltage of up to 1850V DC.
This driver can be used in any possible configuration of two low-side or two high-side switches, or a half-bridge driver with programmable dead time.
Board part number: NCP-NCV51561TO2473LGEVB
NCP-NCV51561TO2473LGEVB Evaluation Board The NCP-NCV51561TO2473LGEVB is an evaluation board for the NCP/NCV5156x gate driver family, which is suitable for driving the SiC MOSFETs typically used to achieve high efficiency in BESS power conversion circuits. The NCP5156x series are isolated dual-channel gate drivers featuring 4.5A source and 9A sink peak currents. They support the fast switching operations of power MOSFETs and SiC MOSFET power switches. The NCP5156x drivers offer short and matched propagation delays, and provide independently 5kVrms of internal galvanic isolation from the input to each output. Internal functional isolation between the two output drivers allows for a working voltage of up to 1500V DC. This driver can be used in any configuration of two low-side or two high-side switches, or a half-bridge driver with programmable dead time. |
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